onsemi N-Channel MOSFET, 20 A, 60 V, 3-Pin DPAK NTD5867NLT4G

Номер на артикул на RS: 719-2901Марка: onsemi№ по каталога на производителя: NTD5867NLT4G
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

50 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

36 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

15 nC @ 10 V

Width

6.22mm

Height

2.38mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Информацията за складовите наличности временно не е налична.

€ 3,97

€ 0,795 Each (In a Pack of 5) (ex VAT)

onsemi N-Channel MOSFET, 20 A, 60 V, 3-Pin DPAK NTD5867NLT4G
Изберете тип опаковка

€ 3,97

€ 0,795 Each (In a Pack of 5) (ex VAT)

onsemi N-Channel MOSFET, 20 A, 60 V, 3-Pin DPAK NTD5867NLT4G
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Опаковка
5 - 45€ 0,795€ 3,97
50 - 95€ 0,685€ 3,42
100 - 495€ 0,594€ 2,97
500 - 995€ 0,521€ 2,61
1000+€ 0,475€ 2,37

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

50 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

36 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

15 nC @ 10 V

Width

6.22mm

Height

2.38mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more