Технически документи
Спецификации
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
24 to 60mA
Maximum Drain Source Voltage
25 V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Source Gate On-Capacitance
5pF
Dimensions
3.04 x 1.4 x 1.01mm
Minimum Operating Temperature
-55 °C
Length
3.04mm
Maximum Operating Temperature
+150 °C
Width
1.4mm
Height
1.01mm
Детайли за продукта
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
€ 20,53
€ 0,205 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
100
€ 20,53
€ 0,205 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
100
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
количество | Единична цена | Per Ролка |
---|---|---|
100 - 240 | € 0,205 | € 2,05 |
250 - 490 | € 0,178 | € 1,78 |
500 - 990 | € 0,156 | € 1,56 |
1000+ | € 0,142 | € 1,42 |
Технически документи
Спецификации
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
24 to 60mA
Maximum Drain Source Voltage
25 V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Source Gate On-Capacitance
5pF
Dimensions
3.04 x 1.4 x 1.01mm
Minimum Operating Temperature
-55 °C
Length
3.04mm
Maximum Operating Temperature
+150 °C
Width
1.4mm
Height
1.01mm
Детайли за продукта
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.