Вземете 7 % отстъпка за всички онлайн поръчки след регистрация с RS.

регистрирайте се сега

onsemi QFET P-Channel MOSFET, 2.7 A, 500 V, 3-Pin TO-220AB FQP3P50

Номер на артикул на RS: 671-5118Марка: onsemi№ по каталога на производителя: FQP3P50
brand-logo
Преглед на всички в MOSFETs

Технически документи

Спецификации

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

2.7 A

Maximum Drain Source Voltage

500 V

Series

QFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.9 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

85 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.7mm

Transistor Material

Si

Typical Gate Charge @ Vgs

18 nC @ 10 V

Number of Elements per Chip

1

Length

10.1mm

Maximum Operating Temperature

+150 °C

Height

9.4mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

QFET® P-Channel MOSFET, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от
P-Channel MOSFET, 3.5 A, 400 V, 3-Pin TO-220AB onsemi FQP4P40
P.O.A.Each (In a Pack of 5) (ex VAT)
Информацията за складовите наличности временно не е налична.

€ 7,51

€ 1,502 Each (In a Pack of 5) (ex VAT)

onsemi QFET P-Channel MOSFET, 2.7 A, 500 V, 3-Pin TO-220AB FQP3P50
Изберете тип опаковка

€ 7,51

€ 1,502 Each (In a Pack of 5) (ex VAT)

onsemi QFET P-Channel MOSFET, 2.7 A, 500 V, 3-Pin TO-220AB FQP3P50
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от
P-Channel MOSFET, 3.5 A, 400 V, 3-Pin TO-220AB onsemi FQP4P40
P.O.A.Each (In a Pack of 5) (ex VAT)

Технически документи

Спецификации

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

2.7 A

Maximum Drain Source Voltage

500 V

Series

QFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.9 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

85 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.7mm

Transistor Material

Si

Typical Gate Charge @ Vgs

18 nC @ 10 V

Number of Elements per Chip

1

Length

10.1mm

Maximum Operating Temperature

+150 °C

Height

9.4mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

QFET® P-Channel MOSFET, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от
P-Channel MOSFET, 3.5 A, 400 V, 3-Pin TO-220AB onsemi FQP4P40
P.O.A.Each (In a Pack of 5) (ex VAT)