Технически документи
Спецификации
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
1.25 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.95V
Minimum Gate Threshold Voltage
1.05V
Maximum Power Dissipation
272 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
€ 5,96
€ 1,987 Each (In a Pack of 3) (ex VAT)
Стандарт
3
€ 5,96
€ 1,987 Each (In a Pack of 3) (ex VAT)
Стандарт
3
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
количество | Единична цена | Per Опаковка |
---|---|---|
3 - 27 | € 1,987 | € 5,96 |
30 - 72 | € 1,832 | € 5,50 |
75 - 147 | € 1,715 | € 5,14 |
150 - 297 | € 1,578 | € 4,73 |
300+ | € 1,449 | € 4,35 |
Технически документи
Спецификации
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
1.25 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.95V
Minimum Gate Threshold Voltage
1.05V
Maximum Power Dissipation
272 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Детайли за продукта