IXYS Polar HiPerFET N-Channel MOSFET, 200 A, 100 V, 4-Pin SOT-227 IXFN200N10P

Номер на артикул на RS: 168-4576Марка: IXYS№ по каталога на производителя: IXFN200N10P
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Технически документи

Спецификации

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

200 A

Maximum Drain Source Voltage

100 V

Series

Polar HiPerFET

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

7.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

680 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

25.07mm

Length

38.23mm

Typical Gate Charge @ Vgs

235 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Height

9.6mm

Страна на произход

Philippines

Детайли за продукта

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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Информацията за складовите наличности временно не е налична.

€ 223,97

€ 22,397 Each (In a Tube of 10) (ex VAT)

IXYS Polar HiPerFET N-Channel MOSFET, 200 A, 100 V, 4-Pin SOT-227 IXFN200N10P

€ 223,97

€ 22,397 Each (In a Tube of 10) (ex VAT)

IXYS Polar HiPerFET N-Channel MOSFET, 200 A, 100 V, 4-Pin SOT-227 IXFN200N10P
Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

200 A

Maximum Drain Source Voltage

100 V

Series

Polar HiPerFET

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

7.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

680 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

25.07mm

Length

38.23mm

Typical Gate Charge @ Vgs

235 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Height

9.6mm

Страна на произход

Philippines

Детайли за продукта

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more