Infineon OptiMOS™ 3 N-Channel MOSFET, 34 A, 200 V, 3-Pin TO-220 IPP320N20N3GXKSA1
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
34 A
Maximum Drain Source Voltage
200 V
Series
OptiMOS™ 3
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.36mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
15.95mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 96,94
€ 1,939 Each (In a Tube of 50) (ex VAT)
50
€ 96,94
€ 1,939 Each (In a Tube of 50) (ex VAT)
Информацията за складовите наличности временно не е налична.
50
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Тръба |
|---|---|---|
| 50 - 50 | € 1,939 | € 96,94 |
| 100+ | € 1,822 | € 91,12 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
34 A
Maximum Drain Source Voltage
200 V
Series
OptiMOS™ 3
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.36mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
15.95mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products