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P-Channel MOSFET Transistor, 70 A, 30 V, 3-Pin DPAK Infineon IPD042P03L3 G

Номер на артикул на RS: 823-5579PМарка: Infineon№ по каталога на производителя: IPD042P03L3 G
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Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

70 A

Maximum Drain Source Voltage

30 V

Package Type

TO-252

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

131 nC @ 10 V

Height

2.41mm

Minimum Operating Temperature

-55 °C

Страна на произход

Malaysia

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P.O.A.

Each (Supplied on a Reel) (ex VAT)

P-Channel MOSFET Transistor, 70 A, 30 V, 3-Pin DPAK Infineon IPD042P03L3 G
Изберете тип опаковка

P.O.A.

Each (Supplied on a Reel) (ex VAT)

P-Channel MOSFET Transistor, 70 A, 30 V, 3-Pin DPAK Infineon IPD042P03L3 G
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от

Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

70 A

Maximum Drain Source Voltage

30 V

Package Type

TO-252

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

131 nC @ 10 V

Height

2.41mm

Minimum Operating Temperature

-55 °C

Страна на произход

Malaysia

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от