Infineon IGW40T120FKSA1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole
Технически документи
Спецификации
Brand
InfineonMaximum Continuous Collector Current
75 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
270 W
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Dimensions
16.13 x 21.1 x 5.21mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Детайли за продукта
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 6,09
€ 6,09 Всеки (ex VAT)
Стандарт
1
€ 6,09
€ 6,09 Всеки (ex VAT)
Стандарт
1
Информацията за складовите наличности временно не е налична.
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| количество | Единична цена |
|---|---|
| 1 - 9 | € 6,09 |
| 10 - 24 | € 5,78 |
| 25 - 49 | € 5,54 |
| 50 - 99 | € 5,29 |
| 100+ | € 4,93 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
InfineonMaximum Continuous Collector Current
75 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
270 W
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Dimensions
16.13 x 21.1 x 5.21mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Детайли за продукта
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products