Diodes Inc P-Channel MOSFET, 700 mA, 100 V, 3-Pin SOT-23 ZXMP10A13FTA

Номер на артикул на RS: 669-7616Марка: DiodesZetex№ по каталога на производителя: ZXMP10A13FTA
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Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

700 mA

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

806 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

1.8 nC @ 5 V, 3.5 nC @ 10 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.05mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1mm

Страна на произход

China

Детайли за продукта

P-Channel MOSFET, 100V to 450V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Информацията за складовите наличности временно не е налична.

€ 10,93

€ 0,437 Each (In a Pack of 25) (ex VAT)

Diodes Inc P-Channel MOSFET, 700 mA, 100 V, 3-Pin SOT-23 ZXMP10A13FTA
Изберете тип опаковка

€ 10,93

€ 0,437 Each (In a Pack of 25) (ex VAT)

Diodes Inc P-Channel MOSFET, 700 mA, 100 V, 3-Pin SOT-23 ZXMP10A13FTA
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Опаковка
25 - 125€ 0,437€ 10,93
150 - 725€ 0,363€ 9,09
750 - 1475€ 0,307€ 7,68
1500+€ 0,252€ 6,31

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

700 mA

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

806 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

1.8 nC @ 5 V, 3.5 nC @ 10 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.05mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1mm

Страна на произход

China

Детайли за продукта

P-Channel MOSFET, 100V to 450V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more