Diodes Inc N-Channel MOSFET, 3.3 A, 30 V, 3-Pin SOT-89 ZXMN3A01ZTA

Номер на артикул на RS: 885-5687Марка: DiodesZetex№ по каталога на производителя: ZXMN3A01ZTA
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

3.3 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-89

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.12 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

2.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

4.6mm

Typical Gate Charge @ Vgs

5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.6mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.95V

Детайли за продукта

N-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Информацията за складовите наличности временно не е налична.

€ 8,36

€ 0,334 Each (In a Pack of 25) (ex VAT)

Diodes Inc N-Channel MOSFET, 3.3 A, 30 V, 3-Pin SOT-89 ZXMN3A01ZTA
Изберете тип опаковка

€ 8,36

€ 0,334 Each (In a Pack of 25) (ex VAT)

Diodes Inc N-Channel MOSFET, 3.3 A, 30 V, 3-Pin SOT-89 ZXMN3A01ZTA
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

3.3 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-89

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.12 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

2.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

4.6mm

Typical Gate Charge @ Vgs

5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.6mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.95V

Детайли за продукта

N-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more