Diodes Inc Quad N/P-Channel MOSFET, 1.8 A, 3.1 A, 30 V, 8-Pin SM ZXMHC3A01T8TA

Номер на артикул на RS: 823-1877PМарка: DiodesZetex№ по каталога на производителя: ZXMHC3A01T8TA
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Технически документи

Спецификации

Channel Type

N, P

Maximum Continuous Drain Current

1.8 A, 3.1 A

Maximum Drain Source Voltage

30 V

Package Type

SM

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

180 mΩ, 330 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

1.7 W

Transistor Configuration

Full Bridge

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.7mm

Transistor Material

Si

Number of Elements per Chip

4

Length

6.7mm

Typical Gate Charge @ Vgs

3.9 nC @ 10 V, 5.2 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.6mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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Информацията за складовите наличности временно не е налична.

€ 6,26

€ 1,253 Each (Supplied on a Reel) (ex VAT)

Diodes Inc Quad N/P-Channel MOSFET, 1.8 A, 3.1 A, 30 V, 8-Pin SM ZXMHC3A01T8TA
Изберете тип опаковка

€ 6,26

€ 1,253 Each (Supplied on a Reel) (ex VAT)

Diodes Inc Quad N/P-Channel MOSFET, 1.8 A, 3.1 A, 30 V, 8-Pin SM ZXMHC3A01T8TA
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N, P

Maximum Continuous Drain Current

1.8 A, 3.1 A

Maximum Drain Source Voltage

30 V

Package Type

SM

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

180 mΩ, 330 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

1.7 W

Transistor Configuration

Full Bridge

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.7mm

Transistor Material

Si

Number of Elements per Chip

4

Length

6.7mm

Typical Gate Charge @ Vgs

3.9 nC @ 10 V, 5.2 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.6mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more