Технически документи
Спецификации
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
17.5 A
Maximum Drain Source Voltage
20 V
Package Type
PowerDI3333-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
41 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Width
3.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.35mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.8mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Детайли за продукта
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 11,17
€ 0,558 Each (In a Pack of 20) (ex VAT)
Стандарт
20
€ 11,17
€ 0,558 Each (In a Pack of 20) (ex VAT)
Стандарт
20
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
количество | Единична цена | Per Опаковка |
---|---|---|
20 - 80 | € 0,558 | € 11,17 |
100 - 480 | € 0,39 | € 7,79 |
500 - 980 | € 0,35 | € 6,99 |
1000 - 2480 | € 0,312 | € 6,24 |
2500+ | € 0,28 | € 5,61 |
Технически документи
Спецификации
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
17.5 A
Maximum Drain Source Voltage
20 V
Package Type
PowerDI3333-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
41 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Width
3.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.35mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.8mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Детайли за продукта