Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
12.7 A
Maximum Drain Source Voltage
25 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Length
5mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
17.5 nC @ 4.5 V, 37 nC @ 10 V
Width
4mm
Transistor Material
Si
Height
1.55mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
Детайли за продукта
N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 42,07
€ 0,841 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
50
€ 42,07
€ 0,841 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
50
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
количество | Единична цена | Per Ролка |
---|---|---|
50 - 245 | € 0,841 | € 4,21 |
250 - 495 | € 0,761 | € 3,80 |
500 - 1245 | € 0,718 | € 3,59 |
1250+ | € 0,673 | € 3,36 |
Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
12.7 A
Maximum Drain Source Voltage
25 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Length
5mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
17.5 nC @ 4.5 V, 37 nC @ 10 V
Width
4mm
Transistor Material
Si
Height
1.55mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
Детайли за продукта