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N-Channel MOSFET, 11.1 A, 100 V, 8-Pin SOIC Vishay SI4056DY-T1-GE3

Номер на артикул на RS: 787-9137Марка: Vishay№ по каталога на производителя: SI4056DY-T1-GE3
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Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

11.1 A

Maximum Drain Source Voltage

100 V

Series

ThunderFET

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

31 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

5.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

19.6 nC @ 10 V

Width

4mm

Minimum Operating Temperature

-55 °C

Height

1.5mm

Детайли за продукта

N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Информацията за складовите наличности временно не е налична.

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€ 5,21

€ 1,043 Each (In a Pack of 5) (ex VAT)

N-Channel MOSFET, 11.1 A, 100 V, 8-Pin SOIC Vishay SI4056DY-T1-GE3
Изберете тип опаковка

€ 5,21

€ 1,043 Each (In a Pack of 5) (ex VAT)

N-Channel MOSFET, 11.1 A, 100 V, 8-Pin SOIC Vishay SI4056DY-T1-GE3
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Опаковка
5 - 45€ 1,043€ 5,22
50 - 245€ 0,885€ 4,42
250 - 495€ 0,73€ 3,65
500 - 1245€ 0,687€ 3,43
1250+€ 0,648€ 3,24

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

11.1 A

Maximum Drain Source Voltage

100 V

Series

ThunderFET

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

31 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

5.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

19.6 nC @ 10 V

Width

4mm

Minimum Operating Temperature

-55 °C

Height

1.5mm

Детайли за продукта

N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more