Вземете 7 % отстъпка за всички онлайн поръчки след регистрация с RS.

регистрирайте се сега

Dual N-Channel MOSFET Transistor, 1.13 A, 20 V, 6-Pin SOT-363 Vishay SI1912EDH-T1-E3

Номер на артикул на RS: 710-3235Марка: Vishay№ по каталога на производителя: SI1912EDH-T1-E3
brand-logo
Преглед на всички в MOSFETs

Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.13 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.45V

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

2.05mm

Width

1.25mm

Minimum Operating Temperature

-55 °C

Height

0.9mm

Страна на произход

China

Детайли за продукта

Dual N-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Информацията за складовите наличности временно не е налична.

P.O.A.

Dual N-Channel MOSFET Transistor, 1.13 A, 20 V, 6-Pin SOT-363 Vishay SI1912EDH-T1-E3
Изберете тип опаковка

P.O.A.

Dual N-Channel MOSFET Transistor, 1.13 A, 20 V, 6-Pin SOT-363 Vishay SI1912EDH-T1-E3
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от

Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.13 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.45V

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

2.05mm

Width

1.25mm

Minimum Operating Temperature

-55 °C

Height

0.9mm

Страна на произход

China

Детайли за продукта

Dual N-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от