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Vishay N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-247AC IRFPC50PBF

Номер на артикул на RS: 542-9838Марка: Vishay№ по каталога на производителя: IRFPC50PBFDistrelec Article No.: 30191592
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Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

600 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

180 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.31mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.87mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

140 nC @ 10 V

Height

20.7mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Информацията за складовите наличности временно не е налична.

€ 4,65

€ 4,65 Всеки (ex VAT)

Vishay N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-247AC IRFPC50PBF
Изберете тип опаковка

€ 4,65

€ 4,65 Всеки (ex VAT)

Vishay N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-247AC IRFPC50PBF
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична цена
1 - 9€ 4,65
10 - 49€ 4,18
50 - 99€ 3,95
100 - 249€ 3,81
250+€ 3,44

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от

Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

600 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

180 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.31mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.87mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

140 nC @ 10 V

Height

20.7mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от