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Vishay N-Channel MOSFET, 30 A, 200 V, 3-Pin TO-247AC IRFP250PBF

Номер на артикул на RS: 919-0032Марка: Vishay№ по каталога на производителя: IRFP250PBF
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Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

200 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

85 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.31mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.87mm

Typical Gate Charge @ Vgs

140 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

20.7mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Информацията за складовите наличности временно не е налична.

€ 56,61

€ 2,264 Each (In a Tube of 25) (ex VAT)

Vishay N-Channel MOSFET, 30 A, 200 V, 3-Pin TO-247AC IRFP250PBF

€ 56,61

€ 2,264 Each (In a Tube of 25) (ex VAT)

Vishay N-Channel MOSFET, 30 A, 200 V, 3-Pin TO-247AC IRFP250PBF
Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Тръба
25 - 25€ 2,264€ 56,61
50 - 100€ 2,22€ 55,50
125+€ 2,106€ 52,65

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

200 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

85 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.31mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.87mm

Typical Gate Charge @ Vgs

140 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

20.7mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more