Vishay N-Channel MOSFET, 70 A, 60 V, 3-Pin TO-247AC IRFP064PBF

Номер на артикул на RS: 815-2742PМарка: Vishay№ по каталога на производителя: IRFP064PBF
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Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

70 A

Maximum Drain Source Voltage

60 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

15.87mm

Typical Gate Charge @ Vgs

190 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

5.31mm

Transistor Material

Si

Number of Elements per Chip

1

Height

20.82mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Информацията за складовите наличности временно не е налична.

€ 82,75

€ 4,138 Each (Supplied in a Tube) (ex VAT)

Vishay N-Channel MOSFET, 70 A, 60 V, 3-Pin TO-247AC IRFP064PBF
Изберете тип опаковка

€ 82,75

€ 4,138 Each (Supplied in a Tube) (ex VAT)

Vishay N-Channel MOSFET, 70 A, 60 V, 3-Pin TO-247AC IRFP064PBF
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Тръба
20 - 48€ 4,138€ 8,28
50 - 98€ 3,968€ 7,94
100 - 198€ 3,524€ 7,05
200+€ 3,308€ 6,62

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

70 A

Maximum Drain Source Voltage

60 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

15.87mm

Typical Gate Charge @ Vgs

190 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

5.31mm

Transistor Material

Si

Number of Elements per Chip

1

Height

20.82mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more