Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
60 V
Package Type
TSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
3.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Height
0.85mm
Forward Diode Voltage
1.2V
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 0,371
Each (On a Reel of 5000) (ex VAT)
5000
€ 0,371
Each (On a Reel of 5000) (ex VAT)
5000
Купете в насипно състояние
количество | Единична цена | Per Ролка |
---|---|---|
5000 - 5000 | € 0,371 | € 1 853,66 |
10000+ | € 0,343 | € 1 713,32 |
Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
60 V
Package Type
TSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
3.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Height
0.85mm
Forward Diode Voltage
1.2V