Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
6.8 A
Maximum Drain Source Voltage
650 V
Series
DTMOSIV
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
6.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.6mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Height
2.3mm
Forward Diode Voltage
1.7V
Страна на произход
Japan
Детайли за продукта
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 6,94
€ 0,694 Each (In a Pack of 10) (ex VAT)
10
€ 6,94
€ 0,694 Each (In a Pack of 10) (ex VAT)
10
Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
6.8 A
Maximum Drain Source Voltage
650 V
Series
DTMOSIV
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
6.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.6mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Height
2.3mm
Forward Diode Voltage
1.7V
Страна на произход
Japan
Детайли за продукта