Вземете 7 % отстъпка за всички онлайн поръчки след регистрация с RS.

регистрирайте се сега

N-Channel MOSFET, 30.8 A, 600 V, 3-Pin TO-220 Toshiba TK31E60X,S1X(S

Номер на артикул на RS: 125-0563Марка: Toshiba№ по каталога на производителя: TK31E60X,S1X(S
brand-logo
Преглед на всички в MOSFETs

Технически документи

Спецификации

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

30.8 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220

Series

DTMOSIV

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

88 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

230 W

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.16mm

Typical Gate Charge @ Vgs

65 nC @ 10 V

Width

4.45mm

Number of Elements per Chip

1

Forward Diode Voltage

1.7V

Height

15.1mm

Страна на произход

Japan

Детайли за продукта

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Информацията за складовите наличности временно не е налична.

€ 7,10

€ 3,552 Each (In a Pack of 2) (ex VAT)

N-Channel MOSFET, 30.8 A, 600 V, 3-Pin TO-220 Toshiba TK31E60X,S1X(S

€ 7,10

€ 3,552 Each (In a Pack of 2) (ex VAT)

N-Channel MOSFET, 30.8 A, 600 V, 3-Pin TO-220 Toshiba TK31E60X,S1X(S
Информацията за складовите наличности временно не е налична.

Купете в насипно състояние

количествоЕдинична ценаPer Опаковка
2 - 8€ 3,552€ 7,10
10 - 18€ 2,601€ 5,20
20 - 48€ 2,536€ 5,07
50 - 98€ 2,458€ 4,92
100+€ 2,416€ 4,83

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

30.8 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220

Series

DTMOSIV

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

88 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

230 W

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.16mm

Typical Gate Charge @ Vgs

65 nC @ 10 V

Width

4.45mm

Number of Elements per Chip

1

Forward Diode Voltage

1.7V

Height

15.1mm

Страна на произход

Japan

Детайли за продукта

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more