Toshiba TK N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-3PN TK20J60W,S1VQ(O
Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
165 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.5mm
Number of Elements per Chip
1
Length
15.5mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
20mm
Страна на произход
Japan
Детайли за продукта
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
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€ 128,30
€ 5,132 Each (In a Tube of 25) (ex VAT)
25
€ 128,30
€ 5,132 Each (In a Tube of 25) (ex VAT)
25
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
Ideate. Create. Collaborate
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Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
165 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.5mm
Number of Elements per Chip
1
Length
15.5mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
20mm
Страна на произход
Japan
Детайли за продукта
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products