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Toshiba TK N-Channel MOSFET, 15 A, 500 V, 3-Pin TO-3PN TK20J50D(F)

Номер на артикул на RS: 695-5391Марка: Toshiba№ по каталога на производителя: TK20J50D(F)
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Технически документи

Спецификации

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

15 A

Maximum Drain Source Voltage

500 V

Series

TK

Package Type

TO-3PN

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

280 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

40.5mm

Typical Gate Charge @ Vgs

45 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Number of Elements per Chip

1

Width

4.8mm

Height

19mm

Minimum Operating Temperature

-55 °C

Страна на произход

Japan

Детайли за продукта

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

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Информацията за складовите наличности временно не е налична.

€ 2,42

€ 2,42 Всеки (ex VAT)

Toshiba TK N-Channel MOSFET, 15 A, 500 V, 3-Pin TO-3PN TK20J50D(F)

€ 2,42

€ 2,42 Всеки (ex VAT)

Toshiba TK N-Channel MOSFET, 15 A, 500 V, 3-Pin TO-3PN TK20J50D(F)
Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична цена
1 - 24€ 2,42
25 - 99€ 1,71
100+€ 1,67

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от

Технически документи

Спецификации

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

15 A

Maximum Drain Source Voltage

500 V

Series

TK

Package Type

TO-3PN

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

280 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

40.5mm

Typical Gate Charge @ Vgs

45 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Number of Elements per Chip

1

Width

4.8mm

Height

19mm

Minimum Operating Temperature

-55 °C

Страна на произход

Japan

Детайли за продукта

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от