Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
40 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
390 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Number of Elements per Chip
1
Width
1.8mm
Length
2.9mm
Typical Gate Charge @ Vgs
1.1 nC @ 4.2 V
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
0.7mm
Страна на произход
Thailand
€ 6,95
€ 0,139 Each (In a Pack of 50) (ex VAT)
Стандарт
50
€ 6,95
€ 0,139 Each (In a Pack of 50) (ex VAT)
Стандарт
50
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
количество | Единична цена | Per Опаковка |
---|---|---|
50 - 100 | € 0,139 | € 6,95 |
150 - 450 | € 0,116 | € 5,82 |
500 - 950 | € 0,10 | € 4,99 |
1000+ | € 0,086 | € 4,28 |
Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
40 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
390 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Number of Elements per Chip
1
Width
1.8mm
Length
2.9mm
Typical Gate Charge @ Vgs
1.1 nC @ 4.2 V
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
0.7mm
Страна на произход
Thailand