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Toshiba N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23 SSM3K339R

Номер на артикул на RS: 171-2471Марка: Toshiba№ по каталога на производителя: SSM3K339R
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Технически документи

Спецификации

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

40 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

390 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Number of Elements per Chip

1

Width

1.8mm

Length

2.9mm

Typical Gate Charge @ Vgs

1.1 nC @ 4.2 V

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

0.7mm

Страна на произход

Thailand

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Информацията за складовите наличности временно не е налична.

€ 6,95

€ 0,139 Each (In a Pack of 50) (ex VAT)

Toshiba N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23 SSM3K339R
Изберете тип опаковка

€ 6,95

€ 0,139 Each (In a Pack of 50) (ex VAT)

Toshiba N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23 SSM3K339R
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Опаковка
50 - 100€ 0,139€ 6,95
150 - 450€ 0,116€ 5,82
500 - 950€ 0,10€ 4,99
1000+€ 0,086€ 4,28

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

40 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

390 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Number of Elements per Chip

1

Width

1.8mm

Length

2.9mm

Typical Gate Charge @ Vgs

1.1 nC @ 4.2 V

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

0.7mm

Страна на произход

Thailand

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more