N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19534KCS
Технически документи
Спецификации
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Series
NexFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
118 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.67mm
Typical Gate Charge @ Vgs
17.1 nC @ 0 V
Height
16.51mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Страна на произход
Philippines
Детайли за продукта
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 39,83
€ 0,797 Each (In a Tube of 50) (ex VAT)
50
€ 39,83
€ 0,797 Each (In a Tube of 50) (ex VAT)
50
Купете в насипно състояние
| количество | Единична цена | Per Тръба |
|---|---|---|
| 50 - 50 | € 0,797 | € 39,83 |
| 100 - 200 | € 0,716 | € 35,82 |
| 250 - 450 | € 0,677 | € 33,85 |
| 500 - 700 | € 0,648 | € 32,41 |
| 750+ | € 0,633 | € 31,63 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Series
NexFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
118 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.67mm
Typical Gate Charge @ Vgs
17.1 nC @ 0 V
Height
16.51mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Страна на произход
Philippines
Детайли за продукта
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products