Технически документи
Спецификации
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +16 V
Width
5.1mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
16.6 nC @ 4.5 V
Height
1.05mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
Стандарт
5
P.O.A.
Стандарт
5
Технически документи
Спецификации
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +16 V
Width
5.1mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
16.6 nC @ 4.5 V
Height
1.05mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Детайли за продукта