STMicroelectronics MDmesh M2 N-Channel MOSFET, 26 A, 650 V, 3-Pin TO-247 STW33N60M2
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
26 A
Maximum Drain Source Voltage
650 V
Series
MDmesh M2
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Transistor Material
Si
Number of Elements per Chip
1
Length
15.75mm
Typical Gate Charge @ Vgs
45.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.15mm
Height
20.15mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
MOSFET Transistors, STMicroelectronics
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€ 47,06
€ 4,71 Each (Supplied in a Tube) (ex VAT)
Производствен пакет (Тръба)
10
€ 47,06
€ 4,71 Each (Supplied in a Tube) (ex VAT)
Производствен пакет (Тръба)
10
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
| количество | Единична цена |
|---|---|
| 10 - 99 | € 4,71 |
| 100 - 499 | € 3,72 |
| 500+ | € 3,34 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
26 A
Maximum Drain Source Voltage
650 V
Series
MDmesh M2
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Transistor Material
Si
Number of Elements per Chip
1
Length
15.75mm
Typical Gate Charge @ Vgs
45.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.15mm
Height
20.15mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products