N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220 STMicroelectronics STP240N10F7
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Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
DeepGate, STripFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Width
4.6mm
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Transistor Material
Si
Height
15.75mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
Детайли за продукта
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 123,85
€ 2,477 Each (In a Tube of 50) (ex VAT)
50
€ 123,85
€ 2,477 Each (In a Tube of 50) (ex VAT)
50
Купете в насипно състояние
количество | Единична цена | Per Тръба |
---|---|---|
50 - 50 | € 2,477 | € 123,85 |
100 - 200 | € 2,414 | € 120,68 |
250+ | € 2,354 | € 117,69 |
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
DeepGate, STripFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Width
4.6mm
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Transistor Material
Si
Height
15.75mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
Детайли за продукта
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.