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P-Channel MOSFET, 60 A, 40 V, 8-Pin PowerFLAT 5 x 6 STMicroelectronics STL60P4LLF6

Номер на артикул на RS: 165-5275Марка: STMicroelectronics№ по каталога на производителя: STL60P4LLF6
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Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

40 V

Package Type

PowerFLAT 5 x 6

Series

STripFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

19 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

100 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.35mm

Typical Gate Charge @ Vgs

34 nC @ 4.5 V

Height

0.95mm

Forward Diode Voltage

1.1V

Страна на произход

China

Детайли за продукта

P-Channel STripFET™ Power MOSFET, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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€ 1 722,24

€ 0,574 Each (On a Reel of 3000) (ex VAT)

P-Channel MOSFET, 60 A, 40 V, 8-Pin PowerFLAT 5 x 6 STMicroelectronics STL60P4LLF6

€ 1 722,24

€ 0,574 Each (On a Reel of 3000) (ex VAT)

P-Channel MOSFET, 60 A, 40 V, 8-Pin PowerFLAT 5 x 6 STMicroelectronics STL60P4LLF6
Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

40 V

Package Type

PowerFLAT 5 x 6

Series

STripFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

19 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

100 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.35mm

Typical Gate Charge @ Vgs

34 nC @ 4.5 V

Height

0.95mm

Forward Diode Voltage

1.1V

Страна на произход

China

Детайли за продукта

P-Channel STripFET™ Power MOSFET, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more