STMicroelectronics STGD18N40LZT4 IGBT, 30 A 420 V, 3-Pin DPAK (TO-252), Surface Mount
Технически документи
Спецификации
Brand
STMicroelectronicsMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
420 V
Maximum Gate Emitter Voltage
16V
Maximum Power Dissipation
125 W
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
6.6 x 6.2 x 2.4mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Детайли за продукта
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 1,871
Each (Supplied as a Tape) (ex VAT)
5
€ 1,871
Each (Supplied as a Tape) (ex VAT)
5
Купете в насипно състояние
количество | Единична цена | Per Лента |
---|---|---|
5 - 20 | € 1,871 | € 9,36 |
25 - 45 | € 1,778 | € 8,89 |
50 - 120 | € 1,60 | € 8,00 |
125 - 245 | € 1,438 | € 7,19 |
250+ | € 1,368 | € 6,84 |
Технически документи
Спецификации
Brand
STMicroelectronicsMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
420 V
Maximum Gate Emitter Voltage
16V
Maximum Power Dissipation
125 W
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
6.6 x 6.2 x 2.4mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Детайли за продукта
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.