STMicroelectronics MDmesh M5 N-Channel MOSFET, 35 A, 710 V, 3-Pin D2PAK STB45N65M5
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
710 V
Series
MDmesh M5
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
78 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
210 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
9.35mm
Length
10.4mm
Typical Gate Charge @ Vgs
82 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Height
4.6mm
Страна на произход
China
Детайли за продукта
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
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€ 4 513,92
€ 4,514 Each (On a Reel of 1000) (ex VAT)
1000
€ 4 513,92
€ 4,514 Each (On a Reel of 1000) (ex VAT)
1000
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
710 V
Series
MDmesh M5
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
78 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
210 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
9.35mm
Length
10.4mm
Typical Gate Charge @ Vgs
82 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Height
4.6mm
Страна на произход
China
Детайли за продукта
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products