Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Package Type
D2PAK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
230 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
130 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Width
9.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Height
4.37mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Страна на произход
China
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
5
P.O.A.
5
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Package Type
D2PAK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
230 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
130 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Width
9.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Height
4.37mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Страна на произход
China