Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Length
10.4mm
Typical Gate Charge @ Vgs
16.8 nC @ 10 V
Width
9.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
4.37mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Страна на произход
China
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 2,433
Each (In a Pack of 5) (ex VAT)
5
€ 2,433
Each (In a Pack of 5) (ex VAT)
5
Купете в насипно състояние
количество | Единична цена | Per Опаковка |
---|---|---|
5 - 20 | € 2,433 | € 12,16 |
25 - 45 | € 2,311 | € 11,56 |
50 - 120 | € 2,079 | € 10,40 |
125 - 245 | € 1,871 | € 9,36 |
250+ | € 1,78 | € 8,90 |
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Length
10.4mm
Typical Gate Charge @ Vgs
16.8 nC @ 10 V
Width
9.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
4.37mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Страна на произход
China