SiC N-Channel MOSFET Module, 20 A, 1200 V Depletion, 3-Pin HiP247 STMicroelectronics SCTWA20N120
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
1200 V
Package Type
Hip247
Series
SCT
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.189 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3.5V
Transistor Material
SiC
Number of Elements per Chip
1
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 10,317
Each (In a Tube of 30) (ex VAT)
30
€ 10,317
Each (In a Tube of 30) (ex VAT)
30
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
1200 V
Package Type
Hip247
Series
SCT
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.189 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3.5V
Transistor Material
SiC
Number of Elements per Chip
1