SiC N-Channel MOSFET, 119 A, 650 V, 3-Pin HiP247 STMicroelectronics SCTW90N65G2V
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
119 A
Maximum Drain Source Voltage
650 V
Package Type
Hip247
Series
SCTW90
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.024 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Transistor Material
SiC
Number of Elements per Chip
1
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 32,22
Всеки (ex VAT)
1
€ 32,22
Всеки (ex VAT)
1
Купете в насипно състояние
количество | Единична цена |
---|---|
1 - 4 | € 32,22 |
5 - 9 | € 30,28 |
10 - 24 | € 28,68 |
25 - 49 | € 27,06 |
50+ | € 25,78 |
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
119 A
Maximum Drain Source Voltage
650 V
Package Type
Hip247
Series
SCTW90
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.024 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Transistor Material
SiC
Number of Elements per Chip
1