Технически документи
Спецификации
Brand
STMicroelectronicsAmplifier Type
JFET
Mounting Type
Surface Mount
Package Type
SOIC
Power Supply Type
Dual
Number of Channels per Chip
4
Pin Count
14
Typical Gain Bandwidth Product
4MHz
Typical Dual Supply Voltage
±15V
Typical Slew Rate
16V/µs
Minimum Operating Temperature
0 °C
Maximum Operating Temperature
+70 °C
Rail to Rail
No
Maximum Input Voltage
18 V
Output Current
60 mA
Offset Voltage
13mV
Typical Voltage Gain
106 dB
Input Offset Current
4nA
Minimum Input Voltage
-18 V
Typical Input Voltage Noise Density
15nV/√Hz
Length
8.75mm
Height
1.6mm
Width
4mm
Input Voltage Range
±18 V
Dimensions
8.75 x 4 x 1.6mm
Страна на произход
Morocco
Детайли за продукта
LF347, LF351, LF353, JFET Inputs, Low Input Bias & Offset Current Operational Amplifiers
The LF347, LF351 and LF353 are high-speed JFET input operational amplifiers that incorporate matched, high-voltage JFET and bipolar transistors. They feature high slew rates, low input bias and offset currents, and low offset voltage temperature coefficient.
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
Стандарт
20
P.O.A.
Стандарт
20
Технически документи
Спецификации
Brand
STMicroelectronicsAmplifier Type
JFET
Mounting Type
Surface Mount
Package Type
SOIC
Power Supply Type
Dual
Number of Channels per Chip
4
Pin Count
14
Typical Gain Bandwidth Product
4MHz
Typical Dual Supply Voltage
±15V
Typical Slew Rate
16V/µs
Minimum Operating Temperature
0 °C
Maximum Operating Temperature
+70 °C
Rail to Rail
No
Maximum Input Voltage
18 V
Output Current
60 mA
Offset Voltage
13mV
Typical Voltage Gain
106 dB
Input Offset Current
4nA
Minimum Input Voltage
-18 V
Typical Input Voltage Noise Density
15nV/√Hz
Length
8.75mm
Height
1.6mm
Width
4mm
Input Voltage Range
±18 V
Dimensions
8.75 x 4 x 1.6mm
Страна на произход
Morocco
Детайли за продукта
LF347, LF351, LF353, JFET Inputs, Low Input Bias & Offset Current Operational Amplifiers
The LF347, LF351 and LF353 are high-speed JFET input operational amplifiers that incorporate matched, high-voltage JFET and bipolar transistors. They feature high slew rates, low input bias and offset currents, and low offset voltage temperature coefficient.