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N-Channel MOSFET, 9 A, 200 V, 3-Pin TO-220 STMicroelectronics IRF630

Номер на артикул на RS: 486-0171Марка: STMicroelectronics№ по каталога на производителя: IRF630
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Преглед на всички в MOSFETs

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

200 V

Series

STripFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

31 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.4mm

Width

4.6mm

Transistor Material

Si

Minimum Operating Temperature

-65 °C

Height

9.15mm

Детайли за продукта

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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€ 1,419

Each (In a Pack of 5) (ex VAT)

N-Channel MOSFET, 9 A, 200 V, 3-Pin TO-220 STMicroelectronics IRF630
Изберете тип опаковка

€ 1,419

Each (In a Pack of 5) (ex VAT)

N-Channel MOSFET, 9 A, 200 V, 3-Pin TO-220 STMicroelectronics IRF630
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Опаковка
5 - 20€ 1,419€ 7,09
25 - 45€ 1,35€ 6,75
50 - 120€ 1,214€ 6,07
125 - 245€ 1,092€ 5,46
250+€ 1,037€ 5,19

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

200 V

Series

STripFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

31 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.4mm

Width

4.6mm

Transistor Material

Si

Minimum Operating Temperature

-65 °C

Height

9.15mm

Детайли за продукта

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от