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ROHM N-Channel MOSFET, 4 A, 45 V, 6-Pin TSMT RVQ040N05TR

Номер на артикул на RS: 826-7816Марка: ROHM№ по каталога на производителя: RVQ040N05TR
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Технически документи

Спецификации

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

45 V

Package Type

TSMT

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-21 V, +21 V

Typical Gate Charge @ Vgs

10 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

1.8mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Height

0.95mm

Страна на произход

Thailand

Детайли за продукта

N-Channel MOSFET Transistors, ROHM

MOSFET Transistors, ROHM Semiconductor

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Информацията за складовите наличности временно не е налична.

P.O.A.

Each (In a Pack of 15) (ex VAT)

ROHM N-Channel MOSFET, 4 A, 45 V, 6-Pin TSMT RVQ040N05TR

P.O.A.

Each (In a Pack of 15) (ex VAT)

ROHM N-Channel MOSFET, 4 A, 45 V, 6-Pin TSMT RVQ040N05TR
Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

45 V

Package Type

TSMT

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-21 V, +21 V

Typical Gate Charge @ Vgs

10 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

1.8mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Height

0.95mm

Страна на произход

Thailand

Детайли за продукта

N-Channel MOSFET Transistors, ROHM

MOSFET Transistors, ROHM Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more