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ROHM RQ6E050AT P-Channel MOSFET, 5 A, 30 V, 6-Pin TSMT-6 RQ6E050ATTCR

Номер на артикул на RS: 124-6805Марка: ROHM№ по каталога на производителя: RQ6E050ATTCR
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Технически документи

Спецификации

Brand

ROHM

Channel Type

P

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

30 V

Series

RQ6E050AT

Package Type

TSMT-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

38 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Dual Base

Maximum Gate Source Voltage

-18 V, +18 V

Width

1.8mm

Number of Elements per Chip

1

Length

3mm

Typical Gate Charge @ Vgs

20.8 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

0.95mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Страна на произход

Thailand

Детайли за продукта

P-Channel MOSFET Transistors, ROHM

MOSFET Transistors, ROHM Semiconductor

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Информацията за складовите наличности временно не е налична.

€ 6,15

€ 0,246 Each (In a Pack of 25) (ex VAT)

ROHM RQ6E050AT P-Channel MOSFET, 5 A, 30 V, 6-Pin TSMT-6 RQ6E050ATTCR

€ 6,15

€ 0,246 Each (In a Pack of 25) (ex VAT)

ROHM RQ6E050AT P-Channel MOSFET, 5 A, 30 V, 6-Pin TSMT-6 RQ6E050ATTCR
Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

ROHM

Channel Type

P

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

30 V

Series

RQ6E050AT

Package Type

TSMT-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

38 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Dual Base

Maximum Gate Source Voltage

-18 V, +18 V

Width

1.8mm

Number of Elements per Chip

1

Length

3mm

Typical Gate Charge @ Vgs

20.8 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

0.95mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Страна на произход

Thailand

Детайли за продукта

P-Channel MOSFET Transistors, ROHM

MOSFET Transistors, ROHM Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more