Технически документи
Спецификации
Brand
PanasonicChannel Type
N
Idss Drain-Source Cut-off Current
5 to 12mA
Maximum Drain Gate Voltage
-55V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SMini3 F2 B
Pin Count
3
Dimensions
2 x 1.25 x 0.8mm
Maximum Operating Temperature
+150 °C
Length
2mm
Height
0.8mm
Width
1.25mm
Страна на произход
China
Детайли за продукта
N-channel JFET, Panasonic
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
20
P.O.A.
20
Технически документи
Спецификации
Brand
PanasonicChannel Type
N
Idss Drain-Source Cut-off Current
5 to 12mA
Maximum Drain Gate Voltage
-55V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SMini3 F2 B
Pin Count
3
Dimensions
2 x 1.25 x 0.8mm
Maximum Operating Temperature
+150 °C
Length
2mm
Height
0.8mm
Width
1.25mm
Страна на произход
China
Детайли за продукта
N-channel JFET, Panasonic
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.