onsemi NVTFS6H850N N-Channel MOSFET, 68 A, 80 V, 8-Pin WDFN NVTFS6H850NTAG

Номер на артикул на RS: 172-3379Марка: onsemi№ по каталога на производителя: NVTFS6H850NTAG
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

68 A

Maximum Drain Source Voltage

80 V

Series

NVTFS6H850N

Package Type

WDFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

107 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

3.15mm

Number of Elements per Chip

1

Length

3.15mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

0.75mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

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Информацията за складовите наличности временно не е налична.

€ 18,58

€ 0,743 Each (In a Pack of 25) (ex VAT)

onsemi NVTFS6H850N N-Channel MOSFET, 68 A, 80 V, 8-Pin WDFN NVTFS6H850NTAG
Изберете тип опаковка

€ 18,58

€ 0,743 Each (In a Pack of 25) (ex VAT)

onsemi NVTFS6H850N N-Channel MOSFET, 68 A, 80 V, 8-Pin WDFN NVTFS6H850NTAG
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Опаковка
25 - 75€ 0,743€ 18,58
100 - 225€ 0,64€ 16,01
250+€ 0,555€ 13,87

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

68 A

Maximum Drain Source Voltage

80 V

Series

NVTFS6H850N

Package Type

WDFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

107 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

3.15mm

Number of Elements per Chip

1

Length

3.15mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

0.75mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more