Технически документи
Спецификации
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
68 A
Maximum Drain Source Voltage
80 V
Series
NVTFS6H850N
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
3.15mm
Number of Elements per Chip
1
Length
3.15mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
0.75mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
€ 18,58
€ 0,743 Each (In a Pack of 25) (ex VAT)
Стандарт
25
€ 18,58
€ 0,743 Each (In a Pack of 25) (ex VAT)
Стандарт
25
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
количество | Единична цена | Per Опаковка |
---|---|---|
25 - 75 | € 0,743 | € 18,58 |
100 - 225 | € 0,64 | € 16,01 |
250+ | € 0,555 | € 13,87 |
Технически документи
Спецификации
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
68 A
Maximum Drain Source Voltage
80 V
Series
NVTFS6H850N
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
3.15mm
Number of Elements per Chip
1
Length
3.15mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
0.75mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101