N-Channel MOSFET, 68 A, 80 V, 8-Pin WDFN onsemi NTTFS6H850NTAG

Номер на артикул на RS: 178-4317Марка: onsemi№ по каталога на производителя: NTTFS6H850NTAG
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

68 A

Maximum Drain Source Voltage

80 V

Package Type

WDFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

107 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Length

3.15mm

Typical Gate Charge @ Vgs

3.6 nC @ 10 V

Width

3.15mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Height

0.75mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Страна на произход

Malaysia

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Информацията за складовите наличности временно не е налична.

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Информацията за складовите наличности временно не е налична.

€ 0,808

Each (On a Reel of 1500) (ex VAT)

N-Channel MOSFET, 68 A, 80 V, 8-Pin WDFN onsemi NTTFS6H850NTAG

€ 0,808

Each (On a Reel of 1500) (ex VAT)

N-Channel MOSFET, 68 A, 80 V, 8-Pin WDFN onsemi NTTFS6H850NTAG
Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

68 A

Maximum Drain Source Voltage

80 V

Package Type

WDFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

107 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Length

3.15mm

Typical Gate Charge @ Vgs

3.6 nC @ 10 V

Width

3.15mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Height

0.75mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Страна на произход

Malaysia

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more