Технически документи
Спецификации
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
59 V
Series
AEC-Q101
Package Type
DPAK
Pin Count
4
Maximum Drain Source Resistance
1.21 Ω
Maximum Gate Threshold Voltage
2.5V
Number of Elements per Chip
2
Transistor Material
Plastic
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
Информацията за складовите наличности временно не е налична.
P.O.A.
Dual Plastic N-Channel MOSFET Transistor, 35 A, 59 V, 4-Pin DPAK onsemi NID9N05BCLT4G
2500
P.O.A.
Dual Plastic N-Channel MOSFET Transistor, 35 A, 59 V, 4-Pin DPAK onsemi NID9N05BCLT4G
Информацията за складовите наличности временно не е налична.
2500
Технически документи
Спецификации
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
59 V
Series
AEC-Q101
Package Type
DPAK
Pin Count
4
Maximum Drain Source Resistance
1.21 Ω
Maximum Gate Threshold Voltage
2.5V
Number of Elements per Chip
2
Transistor Material
Plastic