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onsemi Dual P-Channel MOSFET, 340 mA, 60 V, 6-Pin SOT-23 NDC7003P

Номер на артикул на RS: 806-1236Марка: onsemi№ по каталога на производителя: NDC7003P
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Технически документи

Спецификации

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

340 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Series

PowerTrench

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

960 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

1.6 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

1.7mm

Transistor Material

Si

Number of Elements per Chip

2

Length

3mm

Height

1mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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Информацията за складовите наличности временно не е налична.

€ 7,62

€ 0,381 Each (In a Pack of 20) (ex VAT)

onsemi Dual P-Channel MOSFET, 340 mA, 60 V, 6-Pin SOT-23 NDC7003P
Изберете тип опаковка

€ 7,62

€ 0,381 Each (In a Pack of 20) (ex VAT)

onsemi Dual P-Channel MOSFET, 340 mA, 60 V, 6-Pin SOT-23 NDC7003P
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Опаковка
20 - 180€ 0,381€ 7,62
200 - 480€ 0,328€ 6,56
500 - 980€ 0,284€ 5,68
1000 - 1980€ 0,25€ 5,01
2000+€ 0,228€ 4,55

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

340 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Series

PowerTrench

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

960 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

1.6 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

1.7mm

Transistor Material

Si

Number of Elements per Chip

2

Length

3mm

Height

1mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more