N-Channel MOSFET, 75 A, 75 V, 3-Pin TO-220AB onsemi FDP75N08A
Технически документи
Спецификации
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
75 V
Series
UniFET
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
11 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
137 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
80 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.67mm
Width
4.83mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.4mm
Страна на произход
Malaysia
Детайли за продукта
UniFET™ N-Channel MOSFET, Fairchild Semiconductor
UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 2,613
Each (In a Pack of 5) (ex VAT)
5
€ 2,613
Each (In a Pack of 5) (ex VAT)
5
Купете в насипно състояние
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 5 - 45 | € 2,613 | € 13,06 |
| 50 - 95 | € 2,176 | € 10,88 |
| 100+ | € 1,735 | € 8,68 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
75 V
Series
UniFET
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
11 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
137 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
80 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.67mm
Width
4.83mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.4mm
Страна на произход
Malaysia
Детайли за продукта
UniFET™ N-Channel MOSFET, Fairchild Semiconductor
UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products