Технически документи
Спецификации
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
35 V
Package Type
CPH
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
208 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Length
2.9mm
Typical Gate Charge @ Vgs
4 nC @ 10 V
Width
1.6mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
0.9mm
Страна на произход
China
Детайли за продукта
N-Channel Power MOSFET, 35V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
3000
P.O.A.
3000
Технически документи
Спецификации
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
35 V
Package Type
CPH
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
208 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Length
2.9mm
Typical Gate Charge @ Vgs
4 nC @ 10 V
Width
1.6mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
0.9mm
Страна на произход
China
Детайли за продукта