Технически документи
Спецификации
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
65 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
500 mW
Minimum DC Current Gain
110
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
300 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
4.58 x 3.86 x 4.58mm
Maximum Operating Temperature
150 °C
Детайли за продукта
Small Signal NPN Transistors, 60V to 100V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 0,051
Each (Supplied as a Tape) (ex VAT)
2000
€ 0,051
Each (Supplied as a Tape) (ex VAT)
2000
Купете в насипно състояние
количество | Единична цена | Per Лента |
---|---|---|
2000 - 4000 | € 0,051 | € 101,30 |
6000+ | € 0,048 | € 96,47 |
Технически документи
Спецификации
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
65 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
500 mW
Minimum DC Current Gain
110
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
300 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
4.58 x 3.86 x 4.58mm
Maximum Operating Temperature
150 °C
Детайли за продукта
Small Signal NPN Transistors, 60V to 100V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.