Технически документи
Спецификации
Brand
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
10 A
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
5 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
4.5 V dc
Maximum Collector Base Voltage
60 V dc
Maximum Collector Emitter Saturation Voltage
3 V dc
Height
15.75mm
Width
4.82mm
Maximum Power Dissipation
65 W
Minimum Operating Temperature
-65 °C
Dimensions
10.28 x 4.82 x 15.75mm
Maximum Operating Temperature
+150 °C
Length
10.28mm
Страна на произход
China
Детайли за продукта
PNP Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
50
P.O.A.
50
Технически документи
Спецификации
Brand
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
10 A
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
5 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
4.5 V dc
Maximum Collector Base Voltage
60 V dc
Maximum Collector Emitter Saturation Voltage
3 V dc
Height
15.75mm
Width
4.82mm
Maximum Power Dissipation
65 W
Minimum Operating Temperature
-65 °C
Dimensions
10.28 x 4.82 x 15.75mm
Maximum Operating Temperature
+150 °C
Length
10.28mm
Страна на произход
China
Детайли за продукта
PNP Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.