Технически документи
Спецификации
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
270 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-323 (SC-70)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
330 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
0.9 nC @ 5 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.9mm
Детайли за продукта
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
50
P.O.A.
50
Технически документи
Спецификации
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
270 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-323 (SC-70)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
330 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
0.9 nC @ 5 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.9mm
Детайли за продукта