Технически документи
Спецификации
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-200 mA
Maximum Collector Emitter Voltage
-40 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
625 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
-40 V
Maximum Emitter Base Voltage
-5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
5.2 x 4.19 x 5.33mm
Maximum Collector Emitter Saturation Voltage
-0.4 V
Детайли за продукта
Small Signal PNP Transistors, 40 to 50V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
Производствен пакет (Чувал)
10
P.O.A.
Производствен пакет (Чувал)
10
Технически документи
Спецификации
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-200 mA
Maximum Collector Emitter Voltage
-40 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
625 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
-40 V
Maximum Emitter Base Voltage
-5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
5.2 x 4.19 x 5.33mm
Maximum Collector Emitter Saturation Voltage
-0.4 V
Детайли за продукта
Small Signal PNP Transistors, 40 to 50V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.